Kinetics of silicide formation by thin films of V on Si and Si 0 2 substrates *

The reaction rate of vacuum-evaporated films of V of the order of I 000 A thick is investigated by MeV He backscattering spectrometry. On substrates of single-crystal Si and for anneal times up to several hours in the temperature range 570--650 ·c, VSi 2 is formed at a linear rate in time. The activation energy of the process is 1.7±0.2 eV. The presence of oxygen in amounts of 10% can significantly decelerate the reaction. On substrates of Si02 in the temperature range 730--820 ·c and anneal times of several hours or less, V 3Si is formed at a square-root rate in time. The activation energy of this process is 2.0±0.2 eV.